AFM ANALYSIS OF QUANTUM DOT STRUCTURES INDUCED BY ION SPUTTERING WITH DIFFERENT TIPS

M. Xu () and C. Teichert
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M. Xu: Institut für Physik, Montanuniversität Leoben, A-8700 Leoben, Austria
C. Teichert: Institut für Physik, Montanuniversität Leoben, A-8700 Leoben, Austria

Surface Review and Letters (SRL), 2003, vol. 10, issue 06, 837-841

Abstract: With tips of different hardness, we analyzed the effect of the hardness and shape of the actual AFM tip on the measurement of the best GaSb quantum dot (QD) structures induced by low energyAr+sputtering. The comparison indicated that the complete information on the detailed dot shape and order structure can be determined with the hard and good tip, while with the soft or worn tip some information on the dot height and shape cannot be obtained. Our results suggest that, in order to obtain the complete surface information, the high hardness and good AFM tip should be used for semiconductor QD structures.

Keywords: Ion sputtering; nanostructures; atomic force microscopy; AFM tip; 61.16.Ch; 68.35.BS; 61.82.Ms; 68.55.JK (search for similar items in EconPapers)
Date: 2003
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Citations: View citations in EconPapers (1)

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DOI: 10.1142/S0218625X03005785

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