ETHYLENE REACTIVITY WITH SILICON SURFACE

M.-A. Zaïbi () and J.-P. Lacharme
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M.-A. Zaïbi: Faculté des Sciences de Bizerte, 7021 Zarzouna, Bizerte, Tunisia
J.-P. Lacharme: Laboratoire de Minéralogie-Cristallographie, UMR 7590 CNRS, Université Pierre et Marie Curie, 4 Place Jusssieu, 75252 Paris cedex 05, France

Surface Review and Letters (SRL), 2004, vol. 11, issue 01, 21-25

Abstract: The cleanSi(111)(7×7)surface has been exposed to ethylene(C2H4)doses, up to 7000 L(1L=10-6Torr×1s)at most, under ultrahigh vacuum. The structural and electronic property changes of the surface have been studied by low energy electron diffraction (LEED), Auger electron spectrometry (AES) and photoemission yield spectroscopy (PYS). The interaction presents two types of kinetic adsorption, where the first is produced below 3000 L ofC2H4. In the first step, the ethylene molecule is adsorbed molecularly and the initial sticking coefficientS0is very low(S0≈2×10-3). At the saturation (≈ 5000–6000 L), the valence band is fitted by a power law(E — 4.42)2.5eV.1,2The surface is then a stronger scattering for photoemitted electrons. We attribute this result, produced at the second step of adsorption, to theC2H4-πorbital and hydrogen liberated by this molecule, which break theSi–Sisurface bonds.

Keywords: Ethylene; silicon; surface; adsorption; scattering (search for similar items in EconPapers)
Date: 2004
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DOI: 10.1142/S0218625X04005834

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