STRUCTURAL PROPERTIES OFGaNFILMS GROWN ON THE6H-SiC(0001)$(\sqrt{3}\times \sqrt{3})R30^\circ$SUBSTRATE

X. Q. Dai, H. S. Wu, S. H. Xu, M. H. Xie and S. Y. Tong
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X. Q. Dai: Physics Department, The University of Hong Kong, Hong Kong, China
H. S. Wu: Physics Department, The University of Hong Kong, Hong Kong, China
S. H. Xu: Physics Department, The University of Hong Kong, Hong Kong, China
M. H. Xie: Physics Department, The University of Hong Kong, Hong Kong, China
S. Y. Tong: Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, China

Surface Review and Letters (SRL), 2004, vol. 11, issue 01, 1-6

Abstract: Ab initiototal energy calculations are performed to determine the interface structure ofGaNfilms grown on the6H-SiC(0001)$(\sqrt{3}\times \sqrt{3})R30^\circ$substrate. The results show that theGaNfilm is of the wurtzite structure and has the Ga-polarity. It is also shown that stacking mismatch boundaries (SMBs) caused by the coalescence ofGaNislands grown on stepped terraces of the6H-SiC(0001)surface may be removed by stacking faults as the film grows. The types of SMBs on a stepped6H-SiC(0001)surface are discussed.

Date: 2004
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DOI: 10.1142/S0218625X04005937

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