(Pb, Sm)TiO3THIN FILMS PREPARED BY CHEMICAL SOLUTION DEPOSITION USING ABi2Ti2O7BUFFER LAYER

Changhong Yang, Zhuo Wang (), Xiufeng Cheng, Hongxia Li, Jianru Han and Hongliang Yang
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Changhong Yang: State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China
Zhuo Wang: State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China
Xiufeng Cheng: State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China
Hongxia Li: State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China
Jianru Han: State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China
Hongliang Yang: Department of Optics, Shandong University, Jinan 250100, P. R. China

Surface Review and Letters (SRL), 2004, vol. 11, issue 02, 211-215

Abstract: A thin-film bilayer structure consisting of polycrystallinePb0.85Sm0.1TiO3and preferentially (111)-orientedBi2Ti2O7were prepared using the chemical solution deposition technique. Thin films were deposited by spin-coating. The structural properties of the films were examined by X-ray diffraction. The surface morphology and quality were studied by using an atomic force microscope. The films exhibit a good insulating property and resistance to breakdown. The clockwise hysteresis curve is referred to as polarization type switching, and the memory window is about 3.5 V. The accumulation capacitance and dielectric loss decrease with the increased annealing temperature. The(Pb, Sm)TiO3/Bi2Ti2O7films in the "on" and "off" states are relatively stable.

Keywords: Atomic force microscopy; chemical solution deposition; thin films (search for similar items in EconPapers)
Date: 2004
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DOI: 10.1142/S0218625X04006062

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