MICROCRACKS IN ~ 100 MeVSi7+-ION-IRRADIATEDp-SILICON SURFACES

O. P. Sinha (), P. C. Srivastava () and V. Ganesan
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O. P. Sinha: Department of Physics, Banaras Hindu University, Varanasi – 221 005, India
P. C. Srivastava: Department of Physics, Banaras Hindu University, Varanasi – 221 005, India
V. Ganesan: Inter University Consortium for Department of Atomic Energy Facilities, Indore – 452 017, India

Surface Review and Letters (SRL), 2004, vol. 11, issue 03, 265-269

Abstract: The p-silicon surfaces have been irradiated with ~ 100 MeVSi7+ions to a fluence of2.2×1013ionscm-2, and surface morphology has been studied with atomic force microscopy (AFM). Interesting features of cracks of ~ 47 nm in depth and ~ 103 nm in width on the irradiated surfaces have been observed. The observed features seemed to have been caused by the irradiation-induced stress in the irradiated regions of the target surface.

Keywords: AFM; irradiation; silicon; stress; cracks; 7.79Lh; 61.82Fx; 68.35B; 79.20Rf (search for similar items in EconPapers)
Date: 2004
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DOI: 10.1142/S0218625X04006177

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