STUDY OF TRAPPING RATE AND DEFECT DENSITY INAlSi11.35Mg0.23BY POSITRON ANNIHILATION TECHNIQUE

M. A. Abdel-Rahman, M. S. Abdallah and Emad A. Badawi ()
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M. A. Abdel-Rahman: Faculty of Science, Physics Department, El-Minia University, Egypt
M. S. Abdallah: Faculty of Science, Physics Department, El-Minia University, Egypt
Emad A. Badawi: Faculty of Science, Physics Department, El-Minia University, Egypt

Surface Review and Letters (SRL), 2004, vol. 11, issue 04n05, 427-432

Abstract: The measurements of Positron Annihilation Lifetime Technique (PALT) have been performed onAlSi11.35Mg0.23Alloys. It has been shown that positrons can become trapped at imperfect locations in solids and their mean lifetime can be influenced by changes in the concentration of such defects. No change has been observed in the mean lifetime values at the saturation of defect concentration. The trapping rates of positrons can be determined for thickness reduction up to 11% for dislocation. The concentration of defect (ρ') range varies from8.65×1015to2.35×1018cm-3up to the maximum value of strain (ε) 0.23.

Keywords: Defect concentration (defect density); trapping rate; trapping cross-section; AlSiMgAlloy; Positron Annihilation Lifetime Technique (search for similar items in EconPapers)
Date: 2004
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DOI: 10.1142/S0218625X0400630X

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