GROWTH AND ELECTRICAL PROPERTIES OF(Bi,Nd)4Ti3O12THIN FILMS

Changhong Yang, Zhuo Wang (), Dongying Pan, Jianru Han, Qingxia Li and Jianhua Wang
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Changhong Yang: State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China
Zhuo Wang: State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China
Dongying Pan: State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China
Jianru Han: State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China
Qingxia Li: Shandong Metallurgical Research Institute, Jinan 250014, P. R. China
Jianhua Wang: Shandong Metallurgical Research Institute, Jinan 250014, P. R. China

Surface Review and Letters (SRL), 2004, vol. 11, issue 06, 503-507

Abstract: Neodymium-dopedBi4Ti3O12(Bi3.15Nd0.85Ti3O12)thin films have been synthesized by metalorganic solution decomposition and deposited onSiO2/p-Si(111)substrate by spin coating. The structural characteristic and crystallization of the films were examined by X-ray diffraction and atomic force microscope. The insulating property, dielectric constant and dissipation loss were found to be dependent on the annealing temperature. NonhystereticC–Vcurves at various frequencies were also collected. The films in the ON and OFF states were relatively stable.

Keywords: Thin films; X-ray diffraction; atomic force microscopy; electrical properties (search for similar items in EconPapers)
Date: 2004
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DOI: 10.1142/S0218625X0400644X

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