CHARACTERISTICS OF PHOSPHORUS-DOPED AMORPHOUS CARBON FILMS GROWN BY R. F. PLASMA-ENHANCED CVD WITH A NOVEL PHOSPHORUS SOLID TARGET

M. Rusop (), M. Adachi, T. Soga and T. Jimbo
Additional contact information
M. Rusop: Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology Nagoya 466-8555, Showa-ku, Gokiso-cho, Japan
M. Adachi: Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology Nagoya 466-8555, Showa-ku, Gokiso-cho, Japan
T. Soga: Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology Nagoya 466-8555, Showa-ku, Gokiso-cho, Japan
T. Jimbo: Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology Nagoya 466-8555, Showa-ku, Gokiso-cho, Japan

Surface Review and Letters (SRL), 2005, vol. 12, issue 01, 19-25

Abstract: Phosphorus-doped amorphous carbon (n-C:P) films were grown by r. f.-power-assisted plasma-enhanced chemical vapor deposition at room temperature using a novel solid red phosphorus target. The influence of phosphorus doping on material properties of n-C:P based on the results of simultaneous characterization are reported. Moreover, the solar cell properties such as series resistance, short circuit current density, open circuit current voltage, fill factor and conversion efficiency along with the spectral response are reported for the fabricated carbon-based n-C:P/p-Si heterojunction solar cell that was measured by standard measurement technique. The cells performances have been given in the dark I–V rectifying curve and I–V working curve under illumination when exposed to AM 1.5 illumination condition(100mW/cm2, 25°C). The maximum of open-circuit voltage(Voc)and short-circuit current density(Jsc)for the cells are observed to be approximately 236Vand7.34,mAcm2respectively for the n-C:P/p-Si cell grown at lower r. f. power of 100W. The highest energy conversion efficiency (η) and fill factor (FF) were found to be approximately 0.84% and 49%, respectively. We have observed that the rectifying nature of the heterojunction structures is due to the nature of n-C:P films.

Keywords: Doped carbons; chemical vapor deposition; photoelectron spectroscopy; electrical (electronic) properties (search for similar items in EconPapers)
Date: 2005
References: View complete reference list from CitEc
Citations:

Downloads: (external link)
http://www.worldscientific.com/doi/abs/10.1142/S0218625X05006731
Access to full text is restricted to subscribers

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:wsi:srlxxx:v:12:y:2005:i:01:n:s0218625x05006731

Ordering information: This journal article can be ordered from

DOI: 10.1142/S0218625X05006731

Access Statistics for this article

Surface Review and Letters (SRL) is currently edited by S Y Tong

More articles in Surface Review and Letters (SRL) from World Scientific Publishing Co. Pte. Ltd.
Bibliographic data for series maintained by Tai Tone Lim ().