ELECTRON-SPIN POLARIZATION IN BOTH MAGNETICALLY AND ELECTRICALLY-MODULATED NANOSTRUCTURES

Mao-Wang Lu
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Mao-Wang Lu: Department of Electronic Engineering and Physics, Hunan University of Science and Engineering, Yongzhou, Hunan 425006, P. R. China

Surface Review and Letters (SRL), 2005, vol. 12, issue 01, 67-74

Abstract: We theoretically investigate the spin-dependent transport properties of electrons in realistic magnetic-electric barrier nanostructures, which are produced by the deposition, on top of a heterostructure, of a metallic ferromagnetic stripe with an applied voltage. The degree of the electron-spin polarization is found to be closely associated with this voltage, although the use of applied voltage itself induces no spin polarization effect. As a positive voltage is applied to the stripe the electron-spin polarization shifts towards the low-energy region and increases; it shifts towards the high-energy direction and reduces for a negative applied voltage. These results shown in this work imply that the degree of electron-spin polarization can be tuned by means of an applied voltage on the stripes of system, which may result in a practical voltage-controlled spin filter.

Keywords: Magnetic-electric barrier; spin filtering; spintronics; spin polarization; 73.40.Gk; 73.23.-b; 75.70.Cn (search for similar items in EconPapers)
Date: 2005
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DOI: 10.1142/S0218625X05006780

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