THE EFFECTS OF HYDROSTATIC PRESSURE AND APPLIED ELECTRIC FIELD ON SHALLOW DONOR IMPURITIES INGaAs/GaAlAsGRADED QUANTUM WELL

E. Kasapoglu, H. Sari and I. Sökmen
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E. Kasapoglu: Cumhuriyet University, Physics Department, 58140 Sivas, Turkey
H. Sari: Cumhuriyet University, Physics Department, 58140 Sivas, Turkey
I. Sökmen: Cumhuriyet University, Physics Department, 58140 Sivas, Turkey;

Surface Review and Letters (SRL), 2005, vol. 12, issue 02, 155-159

Abstract: Using a variational approach, we have investigated the effects of the hydrostatic pressure, the well dimension, impurity position and electric field direction on the binding energy of shallow donor impurities inGaAs/GaAlAsgraded quantum well (GQW). We have found that the changes in donor binding energy in GQW strongly depend not only on the quantum confinement, but also on the hydrostatic pressure, on the direction of the electric field and on the impurity position.

Keywords: Graded quantum well; hydrostatic pressure; 71.55.Eq; 71.55.-i (search for similar items in EconPapers)
Date: 2005
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DOI: 10.1142/S0218625X05006871

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