RAMAN SCATTERING STUDIES ON THE STRUCTURAL PROPERTIES OF PULSED LASER DEPOSITED AMORPHOUS CARBON NITRIDE THIN FILMS

M. Rusop (), T. Soga and T. Jimbo
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M. Rusop: Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Showa-ku, Nagoya 466-8555, Japan
T. Soga: Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Showa-ku, Nagoya 466-8555, Japan
T. Jimbo: Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Showa-ku, Nagoya 466-8555, Japan

Surface Review and Letters (SRL), 2005, vol. 12, issue 02, 173-184

Abstract: Raman scattering analysis revealed that the structure of carbon(C)films prepared by pulsed laser deposition at room temperature is predominantly amorphous and the structure of amorphousCnitride(a-CNx)films can be changed with varying substrate temperatures (ST) from 20 to 500°C. The depositeda-CNxfilms are composed ofC–N,C≡NandC–Obonded materials and theC–NandC≡Nbonds are increased with ST. We have found no other obvious peaks that can be distinguished in the range of 900 to 2300 cm-1in which several peaks always appear ina-CNxfilms. The spectra were deconvoluted into Raman D and G peaks and the structural parameters were determined. The upward shifts of Raman G peak towards 1592 cm-1show evidence of a progressive formation of crystallites ina-CNxfilms upon increase of ST, while the upward shifts of Raman D peak towards 1397 cm-1have been related to the decrease of bond-angle disorder andsp3tetrahedral bonding in its structure. Raman FWHM andID/IGalso indicate thatNincorporation with increase of ST caused an increase in the number and/or size of graphitic domains in thea-CNxfilms.

Keywords: Structural; micro-structural; Raman; amorphous carbon nitride; a-CNx; PLD (search for similar items in EconPapers)
Date: 2005
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DOI: 10.1142/S0218625X05006913

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