ZrO2-COATEDSiCNANOWIRES PREPARED BY PLASMA-ENHANCED ATOMIC LAYER CHEMICAL VAPOR DEPOSITION

Youngjo Tak and Kijung Yong ()
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Youngjo Tak: Surface Chemistry Laboratory of Electronic Materials, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea
Kijung Yong: Surface Chemistry Laboratory of Electronic Materials, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea

Surface Review and Letters (SRL), 2005, vol. 12, issue 02, 215-219

Abstract: Plasma-enhanced atomic layer deposition (PE-ALCVD) ofZrO2was performed to coatSiCnanowires and prepare aSiC-ZrO2core-shell nanowire structure. Zirconium tertiary butoxide (ZTB) and hydrogen plasma pulse cycles were used to growZrO2films. The growth temperature ofZrO2PE-ALCVD was 150°C with a growth rate of 1.3 Å/cycle. SEM and TEM images showed uniform coating ofSiCnanowires withZrO2. The thickness ofZrO2coat layer could be controlled by the total number of the pulse cycles. After being annealed at 900°C, a polycrystalline structure ofZrO2layer was observed.

Keywords: Nanowires; core-shell nanowire; SiC; ZrO2; plasma-enhanced ALCVD (search for similar items in EconPapers)
Date: 2005
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DOI: 10.1142/S0218625X05006962

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