SURFACE-INDUCED ELECTRICAL RESISTIVITY OF CONDUCTING THIN FILMS

M. Cattani (), M. C. Salvadori and J. M. Filardo Bassalo
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M. Cattani: Institute of Physics, University of São Paulo, C.P. 66318, CEP: 05315-970, São Paulo, SP, Brazil
M. C. Salvadori: Institute of Physics, University of São Paulo, C.P. 66318, CEP: 05315-970, São Paulo, SP, Brazil
J. M. Filardo Bassalo: Departamento de Física da UFPA — 66075-900, Guamá, Belém, Pará, Brazil

Surface Review and Letters (SRL), 2005, vol. 12, issue 02, 221-226

Abstract: A quantum approach is proposed to calculate the surface-induced electrical resistivity of metallic and semiconducting thin films when several subbands of Fermi participate of the electronic transport. The application of this approach to explain the experimental resistivity data ofPtandAuthin films is briefly reported. The surface-induced resistivity is calculated in detail for the particular case of semiconducting films with only one subband.

Keywords: Electrical resistivity of thin films; metallic and semiconducting thin films (search for similar items in EconPapers)
Date: 2005
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DOI: 10.1142/S0218625X05006974

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