PREPARATION AND PHOTOVOLTAIC PROPERTIES OFAg2O/SiISOTYPE HETEROJUNCTION

Raid A. Ismail (), Khalid Z. Yahya () and Omar A. Abdulrazaq ()
Additional contact information
Raid A. Ismail: Applied Physics Center, Ministry of Science and Technology, Baghdad, Iraq
Khalid Z. Yahya: School of Applied Sciences, University of Technology, Baghdad, Iraq
Omar A. Abdulrazaq: NASSR State Company, Ministry of Industry and Minerals, Baghdad, Iraq

Surface Review and Letters (SRL), 2005, vol. 12, issue 02, 299-303

Abstract: Highly (101)-orientedp-Ag2Othin film with high electrical resistivity was grown by rapid thermal oxidation (RTO) on clean monocrystalline p-typeSiwithout any post-deposition annealing. From optical transmittance and absorptance data, the direct optical band gap was found to be 1.46 eV. The electrical and photovoltaic properties ofAg2O/Siisotype heterojunction were examined in the absence of any buffer layer. Ideality factor of heterojunction was found to be 3.9. Photoresponce result revealed that there are two peaks located at 750 nm and 900 nm.

Keywords: Ag2O/Si; heterojunction; rapid thermal oxidation; photovoltaic (search for similar items in EconPapers)
Date: 2005
References: View complete reference list from CitEc
Citations:

Downloads: (external link)
http://www.worldscientific.com/doi/abs/10.1142/S0218625X05007074
Access to full text is restricted to subscribers

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:wsi:srlxxx:v:12:y:2005:i:02:n:s0218625x05007074

Ordering information: This journal article can be ordered from

DOI: 10.1142/S0218625X05007074

Access Statistics for this article

Surface Review and Letters (SRL) is currently edited by S Y Tong

More articles in Surface Review and Letters (SRL) from World Scientific Publishing Co. Pte. Ltd.
Bibliographic data for series maintained by Tai Tone Lim ().