PREPARATION AND PHOTOVOLTAIC PROPERTIES OFAg2O/SiISOTYPE HETEROJUNCTION
Raid A. Ismail (),
Khalid Z. Yahya () and
Omar A. Abdulrazaq ()
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Raid A. Ismail: Applied Physics Center, Ministry of Science and Technology, Baghdad, Iraq
Khalid Z. Yahya: School of Applied Sciences, University of Technology, Baghdad, Iraq
Omar A. Abdulrazaq: NASSR State Company, Ministry of Industry and Minerals, Baghdad, Iraq
Surface Review and Letters (SRL), 2005, vol. 12, issue 02, 299-303
Abstract:
Highly (101)-orientedp-Ag2Othin film with high electrical resistivity was grown by rapid thermal oxidation (RTO) on clean monocrystalline p-typeSiwithout any post-deposition annealing. From optical transmittance and absorptance data, the direct optical band gap was found to be 1.46 eV. The electrical and photovoltaic properties ofAg2O/Siisotype heterojunction were examined in the absence of any buffer layer. Ideality factor of heterojunction was found to be 3.9. Photoresponce result revealed that there are two peaks located at 750 nm and 900 nm.
Keywords: Ag2O/Si; heterojunction; rapid thermal oxidation; photovoltaic (search for similar items in EconPapers)
Date: 2005
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Persistent link: https://EconPapers.repec.org/RePEc:wsi:srlxxx:v:12:y:2005:i:02:n:s0218625x05007074
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DOI: 10.1142/S0218625X05007074
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