CORRELATION OF TETRAHEDRAL AND TRIHEDRAL BONDING PROPERTIES IN AMORPHOUS CAMPHORIC CARBON THIN FILMS

M. Rusop (), T. Soga and T. Jimbo
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M. Rusop: Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
T. Soga: Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
T. Jimbo: Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

Surface Review and Letters (SRL), 2005, vol. 12, issue 03, 325-332

Abstract: The tetrahedral carbon(ta-C)and boron doped amorphous carbon(a-C:B)thin films have been grown by pulsed laser deposition. The respective effects of diamond percentages by weight in the target (Dwt%) and boron percentages by weight in the camphoric carbon target (Bwt%), on the tetrahedral (sp3) and trihedral (sp2) bonding properties are discussed. The optical gapEgand electrical resistivity ρ increase with Dwt%, up to 1.6 eV and 5.63 × 107Ω cm respectively, for the film deposited using target with 50 Dwt%. We found that the Dwt% has modified the sp3bonds content and the morphology of the carbon films. On the other hand, theEgofa-C:Bfilms is almost unchanged at about 0.95 eV up to 10 Bwt% and decreases thereafter to 0.6 eV at 16 Bwt%. The ρ increases initially to 2.29 × 106Ω cm at 2 Bwt%, and decreases thereafter up to 4.58 × 105and 1.82 × 104Ω cm at 10 and 16 Bwt%, respectively. The variation of structural properties,Egand ρ, can be related to the successful doping ofBin thea-Cfilms at low content of Bwt% (up to 10 Bwt%), as the structural properties andEgremain almost unchanged and the ρ decreased. Since bothEgand ρ decreased sharply with higher Bwt%, this phenomenon can be related to graphitization. In this paper, the dependence of sp3and sp2impurity content on the growth and growth conditions of the films are also studied.

Keywords: Amorphous carbon; tetrahedral; diamond; boron doping; camphoric carbon; pulsed laser deposition; AFM; FTIR; XPS (search for similar items in EconPapers)
Date: 2005
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DOI: 10.1142/S0218625X0500713X

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