PREPARATION AND ELECTRICAL PROPERTIES OF LEAD-FREEBi0.5(Na0.4K0.6)0.5TiO3THIN FILMS

Changhong Yang, Zhuo Wang (), Guangpeng Ma, Shengli Gu, Yuguo Yang, Dongmei Yang and Jianru Han
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Changhong Yang: State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China
Zhuo Wang: State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China
Guangpeng Ma: State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China
Shengli Gu: State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China
Yuguo Yang: State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China
Dongmei Yang: State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China
Jianru Han: State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China

Surface Review and Letters (SRL), 2005, vol. 12, issue 03, 409-412

Abstract: Lead-freeBi0.5(Na0.4K0.6)0.5TiO3films have been synthesized by a chemical solution deposition method and deposited onp-Si(111)substrate by spin coating. Powder of the precursor solution heated at 650°C was studied by infrared scattering spectroscopy. The structural characteristics and crystallization of the films were examined by X-ray diffraction. The surface morphology and quality were studied using atomic force microscopy. The films exhibit good insulating properties and resistance to breakdown. The clockwise hysteresis curve is referred to as polarization type switching and the memory window is about 1.5 V.

Keywords: Thin films; X-ray diffraction; atomic force microscopy; electrical properties (search for similar items in EconPapers)
Date: 2005
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DOI: 10.1142/S0218625X05007220

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