PREPARATION AND CHARACTERIZATION OFIn2O3THIN FILMS FOR OPTOELECTRONIC APPLICATIONS

Raid A. Ismail (), Omar A. Abdulrazaq () and Khalid Z. Yahya ()
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Raid A. Ismail: Applied Physics Center, Ministry of Science and Technology, Bagdad, Iraq
Omar A. Abdulrazaq: NASSR State Company, Ministry of Industry and Minerals, Bagdad, Iraq
Khalid Z. Yahya: School of Applied Sciences, University of Technology, Bagdad, Iraq

Surface Review and Letters (SRL), 2005, vol. 12, issue 04, 515-518

Abstract: Conductive transparentIn2O3thin films with (222)-preferred orientation were prepared by rapid thermal oxidation (RTO) in static air of indium thin films at condition 200°C/30 s. Detailed structural, electrical, and optical characteristics of the film are presented. The data are interpreted to give a direct bandgap of 3.6 eV and indirect bandgap of 2.5 eV. The grownIn2O3films exhibited high figure of merit and sheet resistance as low as 20 Ω/sq. in the absence of any post-deposition annealing conditions. The mobility of these films was estimated to be 31 cm2· V-1· s-1. These results are compared with those ofIn2O3films prepared by other methods.

Keywords: Rapid thermal oxidation; In2O3thin films; figure of merit (search for similar items in EconPapers)
Date: 2005
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DOI: 10.1142/S0218625X05007359

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