ENERGIES 0.16 AND 0.53eV FOR DISLOCATION RECOVERY INAlSi11.35Mg0.23BY POSITRON LIFETIME

M. A. Abdel-Rahman, M. S. Abdallah and Emad A. Badawi ()
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M. A. Abdel-Rahman: Physics Department, Faculty of Science, El-Minia University, Egypt
M. S. Abdallah: Physics Department, Faculty of Science, El-Minia University, Egypt
Emad A. Badawi: Physics Department, Faculty of Science, El-Minia University, Egypt

Surface Review and Letters (SRL), 2005, vol. 12, issue 04, 519-522

Abstract: The recovery behavior of 20% plastically deformedAlSi11.35Mg0.23in various stages of isochronal annealing is investigated by positron lifetime (LT). Experimental results show that the positron mean lifetime is a function of annealing temperature. The lifetime of the positron annihilating in a perfect lattice is 187.3 ps. It is 229.8 ps in a 20% deformed one. There are two regions in the isochronal annealing, one of them is related to the point defect and the other to the dislocation. The activation enthalpy for the dislocation is calculated from the isothermal study in the dislocation region from 575–675 K by slow and fast cooling and it is0.16 ± 0.02and0.53 ± 0.06eV, respectively.

Keywords: AlSiMgalloy; positron annihilation; defects; isothermal and isochronal annealing; activation enthalpy (search for similar items in EconPapers)
Date: 2005
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DOI: 10.1142/S0218625X05007360

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