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DEFECT CONCENTRATION IN DEFORMEDAlSiMgSrBY TRAPPING MODEL OF POSITRON

M. A. Abdel-Rahman, M. S. Abdallah and Emad A. Badawi ()
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M. A. Abdel-Rahman: Physics Department, Faculty of Science, El-Minia University, Egypt
M. S. Abdallah: Physics Department, Faculty of Science, El-Minia University, Egypt
Emad A. Badawi: Physics Department, Faculty of Science, El-Minia University, Egypt

Surface Review and Letters (SRL), 2005, vol. 12, issue 04, 545-547

Abstract: This paper reports the results of lifetime measurements on deformedAlSiMgSralloy. Using the trapping model, we obtained the value of 196.7 ps for the lifetime of the free state, and 210.5 ps for the trapped state. The specific trapping rate per unit defect concentration was calculated to be 0.2280 cm2· s-1. The concentration of defects was5.78×1017cm-3when thickness reduction was 18.2%. The dislocation density for the same thickness reduction is1.63×1010cm-2. We have compared these values with a previously used method1and have obtained perfect agreement for both methods, demonstrating that this a very powerful tool for detecting and evaluating defect concentration.

Keywords: Positron annihilation; trapping model; specific trapping rate (search for similar items in EconPapers)
Date: 2005
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DOI: 10.1142/S0218625X05007396

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