ELECTRONIC DOPING OF AMORPHOUS CARBON THIN FILMS

M. Rusop (), T. Soga, T. Jimbo, M. Umeno and M. Sharon
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M. Rusop: Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Nagoya 466-8555, Japan
T. Soga: Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Nagoya 466-8555, Japan
T. Jimbo: Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Nagoya 466-8555, Japan;
M. Umeno: Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Nagoya 466-8555, Japan;
M. Sharon: Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Nagoya 466-8555, Japan;

Surface Review and Letters (SRL), 2005, vol. 12, issue 04, 579-586

Abstract: This paper reports on the successful deposition of boron(B)-doped p-type(p-C:B)and phosphorus(P)-doped n-type(p-C:P)carbon(C)films, and the fabrication ofp-C:Bon silicon(Si)substrate(p-C:B/n-Si)andn-C:P/p-Sicells by a pulsed laser deposition (PLD) technique using a graphite target at room temperature. The boron and phosphorus atoms incorporated in the films were determined by X-ray photoelectron spectroscopy (XPS) to be in the range of 0.2–1.75 and 0.22–1.77 atomic percentages, respectively. The cells performances have been given in the dark I–V rectifying curve and I–V working curve under illumination when exposed to AM 1.5 illumination conditions (100 mW/cm2, 25°C). The open circuit voltage(Voc)and short circuit current density(Jsc)forp-C:B/n-Siare observed to vary from 230 to 250 mV and from 1.5 to 2.2 mA/cm2, respectively; they vary from 215 to 265 mV and from 7.5 to 10.5 mA/cm2, respectively, forn-C:P/p-Sicells. Thep-C:B/n-Sicell fabricated using the target with the amount of boron by 3 weight percentages (Bwt%) showed the highest energy conversion efficiency,η = 0.20%and fill factor,FF= 45%. Then-C:P/p-Sicell fabricated using the target with the amount of 7 Pwt% showed the highestη = 1.14%andFF= 41%. The quantum efficiency (QE) of thep-C:B/n-Siandn-C:P/p-Sicells were observed to improve with Bwt% and Pwt%, respectively. The contribution of QE in the lower wavelength region (below 750 nm) may be due to photon absorption by the carbon layer, in the higher wavelength region it was due to theSisubstrates. In this paper, the dependence of the boron and phosphorus content on the electrical and optical properties of the deposited films and the photovoltaic characteristics of the respectivep-C:B/n-Siandn-C:P/p-Siheterojunction solar cells are discussed.

Keywords: Solar cell; boron; phosphorus; electronic doping; carbon; pulsed laser deposition (PLD) (search for similar items in EconPapers)
Date: 2005
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DOI: 10.1142/S0218625X05007463

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