SEMICONDUCTING AMORPHOUS CAMPHORIC CARBON NITRIDE THIN FILMS
M. Rusop (),
T. Soga,
T. Jimbo,
M. Umeno and
M. Sharon
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M. Rusop: Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Nagoya 466-8555, Japan
T. Soga: Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Nagoya 466-8555, Japan
T. Jimbo: Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Nagoya 466-8555, Japan;
M. Umeno: Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Nagoya 466-8555, Japan;
M. Sharon: Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Nagoya 466-8555, Japan;
Surface Review and Letters (SRL), 2005, vol. 12, issue 04, 587-595
Abstract:
Amorphous carbon nitride(a-CNx)films have been deposited by pulsed laser deposition at 0.8 Torr nitrogen gas ambient with varying substrate temperature from 20 to 500°C. The effects of the substrate temperature and ambient nitrogen gas pressure on the surface morphology, composition, nitrogen content, structure, and electrical properties of thea-CNxthin films have been investigated. The depositeda-CNxfilms were characterized by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, Fourier transform infrared (FTIR), scanning electron microscopy (SEM), atomic force microscopy (AFM), UV-Visible transmittance, and four-probe resistance measurement. It is found that the amorphous structure ofa-CNxfilms can be changed by the substrate temperature (ST) and thea-CNxfilms with high nitrogen content have relatively high electrical resistivity. Also, graphitization is found to cause the reduction of nitrogen content and changes in the bonding structure of nitrogen atoms in the films.
Keywords: Amorphous carbon nitride; a-CNx; doping; camphor; pulsed laser deposition (PLD); substrate temperature (search for similar items in EconPapers)
Date: 2005
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Persistent link: https://EconPapers.repec.org/RePEc:wsi:srlxxx:v:12:y:2005:i:04:n:s0218625x05007475
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DOI: 10.1142/S0218625X05007475
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