LUMINESCENCE AND THERMAL ANNEALING OF SPUTTERED DEPOSITED THULIUM- AND SAMARIUM-DOPED AMORPHOUSAlNFILMS

Muhammad Maqbool ()
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Muhammad Maqbool: Department of Science and Mathematics, Mount Olive College, 634 Henderson Street, Mount Olive, NC 28365, USA

Surface Review and Letters (SRL), 2005, vol. 12, issue 05n06, 767-771

Abstract: Thin films of thulium- and samarium-dopedAlNare deposited on silicon (111) substrates at 77 K by RF magnetron sputtering method. 200–400 nm thick films are grown at 100–200 watts RF power and 5–8 mTorr nitrogen, using a metal target ofAlwithTmandSmseparately. X-rays diffraction results show that films are amorphous. Cathodoluminescence studies are performed at room temperature and two dominant peaks are observed inTmat 467 nm from1D2→3F4transition and 480 nm from1G4to the ground state3H6transition. Other peaks in the visible region are obtained at 650 nm and 685 nm due to1G4→3F4and1D2→3H4transitions. Peaks in the ultraviolet and infrared region are also obtained at 371 nm and 802 nm as a result from1D2→3H6and3H4→3H6transition, respectively.Smgives four peaks at 564 nm, 600 nm, 648 nm and 707 nm as a result of4G5/2→6H5/2,4G5/2→6H7/2,4G5/2→6H9/2and4G5/2→6H11/2transitions. Films are thermally annealed at 1200 K for half an hour in a nitrogen atmosphere. Thermal annealing enhances the intensity of luminescence.

Keywords: Thin film deposition; luminescence; thermal annealing; thulium; samarium; AlN (search for similar items in EconPapers)
Date: 2005
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DOI: 10.1142/S0218625X05007633

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