DIFFERENT GROWTH BEHAVIOR OFGe,AlANDSbON GRAPHITE

Wende Xiao, Zhijun Yan, Sunil Singh Kushvaha, Maojie Xu and Xue-Sen Wang ()
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Wende Xiao: Department of Physics and NUS Nanoscience and Nanotechnology Initiative, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
Zhijun Yan: Department of Physics and NUS Nanoscience and Nanotechnology Initiative, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore;
Sunil Singh Kushvaha: Department of Physics and NUS Nanoscience and Nanotechnology Initiative, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
Maojie Xu: Department of Physics and NUS Nanoscience and Nanotechnology Initiative, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore;
Xue-Sen Wang: Department of Physics and NUS Nanoscience and Nanotechnology Initiative, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore

Surface Review and Letters (SRL), 2006, vol. 13, issue 02n03, 287-296

Abstract: Growth ofGe,AlandSbon highly oriented pyrolytic graphite (HOPG) was systematically investigated usingin situscanning tunneling microscopy (STM). At room temperature (RT), three dimensional (3D) clusters of all three elements nucleate and grow at the step edges and defect sites of HOPG. The clusters ofAlandGeform chains, whileSbislands are mostly isolated. With further deposition at RT,Alclusters grow and coarsen into faceted islands with craters on the top (111) facets, whereas ramified single- and double-layer cluster islands are observed forGe. When deposited or annealed atT ≥ 175°C,Geforms crystallites but with randomly oriented facets. As sphericalSbislands grow beyond certain size, (111) facets appear on the top. Additionally, crystalline 2D films and 1D nanorods are observed forSbdeposited at RT. AtT ≈ 100°Cand higher flux, only the 2D and 1DSbislands are formed. These different growth behaviors reflect the unique nature in which the atoms (molecules), clusters and crystallites of each element interact with HOPG surface and with each other.

Keywords: Aluminum; germanium; antimony; graphite; nanostructures; scanning tunneling microscopy (STM) (search for similar items in EconPapers)
Date: 2006
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DOI: 10.1142/S0218625X06008025

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