IN SITUSTM INVESTIGATION OFGeNANOSTRUCTURES WITH AND WITHOUTSbON GRAPHITE

Sunil Singh Kushvaha, Zhijun Yan, Mao-Jie Xu, Wende Xiao and Xue-Sen Wang ()
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Sunil Singh Kushvaha: Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
Zhijun Yan: Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore;
Mao-Jie Xu: Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore;
Wende Xiao: Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
Xue-Sen Wang: Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore

Surface Review and Letters (SRL), 2006, vol. 13, issue 02n03, 241-249

Abstract: Germanium was deposited onto highly oriented pyrolytic graphite (HOPG) with and without antimony in ultra-high vacuum. The surface morphology was analyzed usingin situscanning tunneling microscopy (STM) at room temperature (RT). The film grows exclusively in 3D island mode and was affected significantly by substrate defects. At initial stage, nucleation of cluster occurred at step edges and defect sites. Later, we found various types ofGenanostructures on HOPG in different deposition conditions and stages, including cluster chains, cluster islands, nanowires, and double layer ramified islands at RT. CompactGeislands were observed when depositing at a substrate temperature of 450 K or after an annealing at 600 K following RT deposition. In addition, the pre-depositedSbon graphite enhances the sticking probability and suppresses the surface diffusion ofGeatoms, resulting in a significant increase inGecluster island density on HOPG terraces.

Keywords: Germanium; graphite; antimony; cluster; surfactant; scanning tunneling microscopy (STM) (search for similar items in EconPapers)
Date: 2006
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DOI: 10.1142/S0218625X06008098

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