PREPARATION AND CHARACTERIZATION OF INDIUM OXIDE AND INDIUM TIN OXIDE FILMS BY ACTIVATED REACTIVE EVAPORATION
K. Narasimha Rao () and
Sanjay Kashyap
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K. Narasimha Rao: Department of Instrumentation, Indian Institute of Science, Bangalore 560012, India
Sanjay Kashyap: Department of Metallurgy, Indian Institute of Science, Bangalore 560012, India
Surface Review and Letters (SRL), 2006, vol. 13, issue 02n03, 221-225
Abstract:
Transparent and conducting oxide films find many applications because of their excellent properties such as high optical transparency, low surface resistance, high infrared reflectance, etc. Realization of these properties depend upon the choice of the deposition technique and the control of deposition parameters. In this paper, we report the preparation of highly transparent and conducting films of indium oxide(In2O3)and indium tin oxide (ITO) by activated reactive evaporation on glass substrates. These films were deposited by evaporating pure indium and90%In+ 10%Snalloy using an electron gun in the presence of oxygen ions at ambient temperature. Films of different thickness have been prepared and their optical, electrical and structural properties are studied.In2O3films showed higher transparency (90%) compared to ITO films (85%) but the electrical resistivity was observed to be little higher (2.5 × 10-3Ω cm) compared to ITO films (6 × 10-4Ωcm). Hall measurements on aged ITO films gave the charge density of 3 × 1020per cm3and mobility 35.6 cm2/V-s. The refractive index and extinction coefficient were found to be around 2.0 and 0.005 for ITO films and 2.10 and 0.001 forIn2O3films at 550 nm respectively. ITO andIn2O3films were amorphous in nature for lesser thickness, but for thicker films, the partial crystallinity was observed.
Keywords: Transparent conducting oxide films; optical properties; electrical properties; activated reactive evaporation (search for similar items in EconPapers)
Date: 2006
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DOI: 10.1142/S0218625X06008128
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