SIMS STUDIES OFCl-DOPEDZnSeEPILAYERS GROWN BY MBE

F. S. Gard (), J. D. Riley and K. Prince
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F. S. Gard: Department of Physics, Sultan Qaboos University, P. O. Box 36, Post Code 123, Sultanate of Oman;
J. D. Riley: Department of Physics, La Trobe University, VIC. 3086, Australia
K. Prince: Australian Nuclear Science and Technology Organization, Menai, NSW 2234, Australia

Surface Review and Letters (SRL), 2006, vol. 13, issue 02n03, 215-220

Abstract: Chlorine is one of the most used species to produce n-typeZnSeepilayers. In this paper, we present Secondary Ion Mass Spectrometry (SIMS) profiles of a series ofCl-dopedZnSesamples, which were grown by Molecular Beam Epitaxy (MBE) technique onGaAssubstrates. These profiles have been used to examine the limitation of SIMS analysis of narrowCl-delta layers. In order to convert SIMS raw data to quantified data, the depth profile from aCl-implanted standard sample has been used to estimate the "useful ion yield" of chlorine and thus the instrumental sensitivity for chlorine in aZnSematrix. The "useful ion yield" and detection limit of chlorine in theZnSehost matrix were calculated to be4.7 × 10-7and5 × 1017atoms/cm3, respectively.

Keywords: SIMS; MBE; GaAs; ZnSe (search for similar items in EconPapers)
Date: 2006
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DOI: 10.1142/S0218625X0600813X

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