HETEROEPITAXIAL GROWTH OF STRESS FREE SINGLE CRYSTAL PEROVSKITE THIN FILMS
K. Wasa,
S. H. Seo,
D. Y. Noh,
I. Kanno and
T. Suzuki
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K. Wasa: Faculty of Science, Yokohama City University, Yokohama, Japan
S. H. Seo: Kwangju Institute of Science and Technology, Kwangju, 506-712, Korea
D. Y. Noh: Kwangju Institute of Science and Technology, Kwangju, 506-712, Korea
I. Kanno: Department of Mechanical Engineering, Kyoto University, Kyoto, Japan
T. Suzuki: Department of Mechanical Engineering, Kyoto University, Kyoto, Japan
Surface Review and Letters (SRL), 2006, vol. 13, issue 02n03, 167-172
Abstract:
Thin films of singlec-domain/single crystal(PbMg1/3Nb2/3O3)1-x(PbTiO3)x,x = 0–0.4(PMNT) were heteroepitaxially grown on(001)SrTiO3and(001)MgOsubstrates by magnetron sputtering using a quenching process. The lattice parameters of the quenched PMNT thin films were almost the same to the bulk values independently to the lattice parameters of substrates. The quenched PMNT thin films showed stress free structural properties, although the crystal structure of thin films is modified from bulk PMNT. The electromechanical properties are the same to the bulk singlec-domain single crystals.
Keywords: Thin films; PMN-PT; single crystal; stress free; piezoelectricity (search for similar items in EconPapers)
Date: 2006
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DOI: 10.1142/S0218625X06008189
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