BARRIER HEIGHT VARIATIONS AND INTERFACE PROPERTIES OFPtSi/SiSTRUCTURES

A. Sellai and P. Dawson
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A. Sellai: Department of Physics, Sultan Qaboos University, P.O. Box 36, Muscat 136, Oman
P. Dawson: School of Physics, Queen's University of Belfast, Belfast BT7 1NN, UK

Surface Review and Letters (SRL), 2006, vol. 13, issue 02n03, 273-278

Abstract: To study some of the interfacial properties ofPtSi/Sidiodes, Schottky structures were fabricated on (100) crystalline silicon substrates by conventional thermal evaporation ofPtonSifollowed by annealing at different temperatures (from 400°C to 700°C) to formPtSi. ThePtSi/n-Sidiodes, all yielded Schottky barrier (SB) heights that are remarkably temperature dependent. The temperature range (20–290 K) over which theI–Vcharacteristics were measured in the present study is broader with a much lower limit (20 K), than what is usually reported in literature. These variations in the barrier height are adequately interpreted by introducing spatial inhomogeneity into the barrier potential with a Gaussian distribution having a mean barrier of 0.76 eV and a standard deviation of 30 meV. Multi-frequency capacitance–voltage measurements suggest that the barrier is primarily controlled by the properties of the silicide–silicon interface. The forwardC–Vcharacteristics, in particular, show small peaks at low frequencies that can be ascribed to interface states rather than to a series resistance effect.

Keywords: Schottky contacts; silicide interface; C–Vcharacteristics; I–V–Tcharacteristics (search for similar items in EconPapers)
Date: 2006
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DOI: 10.1142/S0218625X06008244

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