IN SITUSTUDIES OF EPITAXIAL GROWTH BY SYNCHROTRON X-RAY DIFFRACTION

Wolfgang Braun () and Klaus H. Ploog
Additional contact information
Wolfgang Braun: Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany
Klaus H. Ploog: Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany

Surface Review and Letters (SRL), 2006, vol. 13, issue 02n03, 155-166

Abstract: X-rays are ideal to study the structure of crystals due to their weak interaction with matter and in most cases allow a quantitative analysis using kinematical theory. To study the incorporation of atoms during crystal growth and to analyze the kinetics on the crystal surface high primary beam intensities available at synchrotrons are required. Our studies of the molecular beam epitaxy growth of III–V semiconductors reveal that, despite their similarity in crystal structure, the surface kinetics ofGaAs(001),InAs(001)andGaSb(001)differ strongly.GaAsshows an unexpectedly large coarsening exponent outside the predicted range of Ostwald ripening models during recovery.GaSbexhibits dramatically different surface morphology variations during growth and recovery. Overgrowth ofGaAsby epitaxialMnAsdemonstrates the ability of X-ray diffraction to follow an interface as it is buried during heteroepitaxy, which is not possible by reflection high-energy electron diffraction.

Keywords: Molecular beam epitaxy; surface X-ray diffraction; in situ; coarsening; Ostwald ripening; III–V surfaces (search for similar items in EconPapers)
Date: 2006
References: View complete reference list from CitEc
Citations:

Downloads: (external link)
http://www.worldscientific.com/doi/abs/10.1142/S0218625X06008256
Access to full text is restricted to subscribers

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:wsi:srlxxx:v:13:y:2006:i:02n03:n:s0218625x06008256

Ordering information: This journal article can be ordered from

DOI: 10.1142/S0218625X06008256

Access Statistics for this article

Surface Review and Letters (SRL) is currently edited by S Y Tong

More articles in Surface Review and Letters (SRL) from World Scientific Publishing Co. Pte. Ltd.
Bibliographic data for series maintained by Tai Tone Lim ().