GROWTH OF ZIRCONIUM SILICATE THIN FILM BY PULSED-MOCVD USING ZTB AND TDEAS

Jaehyun Kim and Kijung Yong ()
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Jaehyun Kim: Surface Chemistry Laboratory of Electronic Materials, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, South Korea
Kijung Yong: Surface Chemistry Laboratory of Electronic Materials, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, South Korea

Surface Review and Letters (SRL), 2006, vol. 13, issue 05, 567-571

Abstract: Zirconium silicate(ZrxSi1-xO2)thin films were deposited by pulsed metal-organic chemical vapor deposition (MOCVD) using zirconium tert-butoxide (ZTB) and tetrakis-diethylamido silane (TDEAS). The growth temperature of 200–300°C was used to deposit films with uniform thickness. The grown films showed theZr-rich composition, which is thought to induce theZr-silicide formation at the interface of the silicate andSisubstrate. The film composition and chemical binding states were investigated by XPS depth profiling measurements.

Keywords: Zirconium silicate; MOCVD; metal oxide (search for similar items in EconPapers)
Date: 2006
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DOI: 10.1142/S0218625X06008505

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