A NOVEL NANOPOROUS SILICON PREPARED USING ELECTROCHEMICAL DEPOSITION TECHNIQUE FOR LIGHT EMITTING DIODE APPLICATIONS

S. Abdullah, M. Rusop () and M. R. Muhamad
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S. Abdullah: Institute of Science, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor, Malaysia
M. Rusop: Institute of Science, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor, Malaysia
M. R. Muhamad: Physics Department, University of Malaya, 50603 Kuala Lumpur, Malaysia

Surface Review and Letters (SRL), 2006, vol. 13, issue 05, 573-576

Abstract: The electroluminescence (EL) studies on the aluminum-doped nanoporous silicon(NPSi:Al)have been conducted. Nanoporous silicon(NPSi)layers have been prepared by anodically etching the unpolished p-typeSi[100] wafer with surface resistivity of 4–8 Ω cm-1in hydrofluoric solution at 1:1 ratio of ethanol. Aluminum(Al)was doped onNPSiusing cathodic electrodeposition composed of aluminum chloride(AlCl3)and ethanol electrolyte. A diode structure has been fabricated comprising a semi-transparentAu/NPSi:Al/p-Si/Alohmic contact electrode showing rectification on a forward biasI–Vcurve. EL fromNPSiandNPSi:Al/p-Sihas also been observed using the diode structure. TheNPSi:Al/p-Sidevice shows increasing EL quantum efficiency at about 30%, and blue-shift EL spectra are observed. Possible reasons for the enhancement will be discussed.

Keywords: Nanostructure; porous silicon; doping process; quantum efficiency; electroluminescence; luminescence (search for similar items in EconPapers)
Date: 2006
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DOI: 10.1142/S0218625X06008517

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