THE CHARACTERISTIC OF AS-GROWN AND POST-ANNEALED NITROGEN DOPED AMORPHOUS CARBON THIN FILMS DEPOSITED BY SURFACE WAVE MICROWAVE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION METHOD

M. Rusop (), S. Abdullah, S. Adhikari, A. M. M. Omer, T. Soga, T. Jimbo and M. Umeno
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M. Rusop: Institute of Science, Universiti Teknologi MARA (UiTM), Shah Alam 40450, Selangor, Malaysia
S. Abdullah: Institute of Science, Universiti Teknologi MARA (UiTM), Shah Alam 40450, Selangor, Malaysia
S. Adhikari: Department of Electronic Engineering, Chubu University, Matsumoto-cho 1200, Kasugai 487-8501, Japan
A. M. M. Omer: Department of Electronic Engineering, Chubu University, Matsumoto-cho 1200, Kasugai 487-8501, Japan
T. Soga: Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
T. Jimbo: Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
M. Umeno: Department of Electronic Engineering, Chubu University, Matsumoto-cho 1200, Kasugai 487-8501, Japan

Surface Review and Letters (SRL), 2006, vol. 13, issue 05, 593-598

Abstract: Nitrogen doped amorphous carbon(a-C:N)thin films were deposited on silicon and quartz substrates by microwave surface-wave plasma chemical vapor deposition (SWMP-CVD) technique at low temperatures (

Keywords: Amorphous carbon; nitrogen; surface wave; microwave; PECVD; annealing; optical band gap (search for similar items in EconPapers)
Date: 2006
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DOI: 10.1142/S0218625X06008542

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