THE ELECTRIC FIELD DEPENDENCE OF THE PHOTOIONIZATION CROSS-SECTION OF SHALLOW DONOR IMPURITIES IN QUANTUM DOTS: INFINITE AND FINITE MODEL

E. Kasapoglu, H. Sari, U. Yesilgul and I. Sökmen
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E. Kasapoglu: Cumhuriyet University, Physics Department, 58140 Sivas, Turkey
H. Sari: Cumhuriyet University, Physics Department, 58140 Sivas, Turkey
U. Yesilgul: Cumhuriyet University, Physics Department, 58140 Sivas, Turkey
I. Sökmen: Dokuz Eylül University, Physics Department İzmir, Turkey

Surface Review and Letters (SRL), 2006, vol. 13, issue 06, 747-752

Abstract: Using a variational approach, we have calculated the photo-ionization cross-section of a shallow donor impurity in a quantum dot with finite and infinite potential barriers in the presence of an electric field as a function of the photon energy. Our calculations have revealed the dependence of the photoionization cross-section on the electric field, the size of the quantum dot and the impurity position.

Keywords: Photoionization; quantum dot; donor impurity; 71.55.Eq; 71.55.-I; 78.67.Hc (search for similar items in EconPapers)
Date: 2006
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DOI: 10.1142/S0218625X06008797

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