NANO-PARTICLES AND FILMS OF CARBON NITRIDE PREPARED BY USING THE SIMPLE PLASMA SPUTTERING DEPOSITION TECHNIQUES

B. Q. Yang, H. Y. Li, Y. C. Shi and P. X. Feng ()
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B. Q. Yang: University of Puerto Rico, Rio Piedras, San Juan 00931, Puerto Rico
H. Y. Li: Physics Department, Dong Hua University, Shanghai 200051, P. R. China
Y. C. Shi: Physics Department, Dong Hua University, Shanghai 200051, P. R. China
P. X. Feng: University of Puerto Rico, Rio Piedras, San Juan 00931, Puerto Rico

Surface Review and Letters (SRL), 2006, vol. 13, issue 06, 847-853

Abstract: Nanoscale particles and films of carbon nitride (CN) were synthesized onSi(100)substrates at room temperature by using simple plasma sputtering deposition techniques based on DC Glow Discharge with Hollow Cathode electrodes. The bonding structures of the films were investigated by X-ray photoelectron spectroscopy and Raman spectroscopy. G and D bands in Raman spectra of the samples were identified. Following an increase of the precursor nitrogen pressure, the intensity of the D band in Raman spectra of the sample became strong. Similar phenomenon was also observed with an increase of the bias voltage. Scanning electron microscope images of the samples indicated that smooth and uniformCNxfilms were obtained at low bias voltages. Whereas, setting a pulsed bias voltage up to 5 kV, several groups of nanoparticles were observed. Each group of nanoparticles showed "sunflower" type of distribution.

Keywords: Plasma sputtering deposition; nanoscale CN particles; CNxfilms; distribution (search for similar items in EconPapers)
Date: 2006
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DOI: 10.1142/S0218625X06008943

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