PREPARATION AND CHARACTERISTICS OFSm-DOPEDBi2Ti2O7THIN FILMS

Dongmei Yang, Changhong Yang, Chunxue Yuan, Xin Yin and Jianru Han ()
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Dongmei Yang: State Key Laboratory of Crystal Materials, Shandong University, Ji'nan 250100, P. R. China
Changhong Yang: School of Materials Science and Engineering, Ji'nan University, 250022, P. R. China
Chunxue Yuan: State Key Laboratory of Crystal Materials, Shandong University, Ji'nan 250100, P. R. China
Xin Yin: State Key Laboratory of Crystal Materials, Shandong University, Ji'nan 250100, P. R. China
Jianru Han: State Key Laboratory of Crystal Materials, Shandong University, Ji'nan 250100, P. R. China

Surface Review and Letters (SRL), 2007, vol. 14, issue 01, 147-150

Abstract: Crack-free Sm-dopedBi2Ti2O7(Sm:Bi2Ti2O7)thin films with a strong (111) orientation have been prepared onp-Si(111)by chemical solution deposition (CSD). The structural properties and crystallizations were studied by X-ray diffraction. The surface morphology and quality were examined using atomic force microscopy (AFM). The dielectric constant and loss factor at different frequencies were also evaluated at room temperature. Their insulation was studied, too. The films exhibit better insulating property than does the pureBi2Ti2O7.

Keywords: CSD; Sm:Bi2Ti2O7; thin films; electrical properties (search for similar items in EconPapers)
Date: 2007
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DOI: 10.1142/S0218625X07009165

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