PREPARATION OF (100)- AND (110)-ORIENTEDLaNiO3THIN FILMS BY CHEMICAL SOLUTION DEPOSITION

Pilong Wang, Weibing Wu, Guangda Hu (), Suhua Fan, Yanxia Ding and Haitao Wu
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Pilong Wang: School of Materials Science and Engineering, Ji'nan University, Ji'nan 250022, China
Weibing Wu: School of Materials Science and Engineering, Ji'nan University, Ji'nan 250022, China
Guangda Hu: School of Materials Science and Engineering, Ji'nan University, Ji'nan 250022, China
Suhua Fan: School of Materials Science and Engineering, Ji'nan University, Ji'nan 250022, China
Yanxia Ding: School of Materials Science and Engineering, Ji'nan University, Ji'nan 250022, China
Haitao Wu: School of Materials Science and Engineering, Ji'nan University, Ji'nan 250022, China

Surface Review and Letters (SRL), 2007, vol. 14, issue 01, 123-128

Abstract: LaNiO3(LNO) thin films were prepared onSi(100)substrates by a chemical solution deposition method. The orientation of LNO films was controlled by changing the acetic acid amount, concentration of the precursor solutions and pre-annealing time. The highly (100)- and (110)-oriented LNO films were obtained by optimizing these processing conditions. The orientation factors of the optimized (100)- and (110)-oriented LNO films were more than 0.99 and 0.93. Their room-temperature resistivities were 5.1 × 10-4Ωcm and 5.4 × 10-4Ωcm, respectively. The growth mechanisms of the (110)- and (100)-oriented LNO films were discussed.

Keywords: LNO thin film; structure control; chemical solution deposition (search for similar items in EconPapers)
Date: 2007
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DOI: 10.1142/S0218625X07009177

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