SEPARATEDCuInSe2QUANTUM DOTS ONZnOTHIN FILM BY ICP-ASSISTED MAGNETRON SPUTTERING

S. Y. Huang, S. Xu, J. D. Long, Q. J. Cheng, X. B. Xu and J. B. Chu
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S. Y. Huang: Physics Department, Nanotech. Center, East China Normal University, Shanghai 200062, P. R. China
S. Xu: Plasma Source and Application Center, NIE, Nanyang Technological University, 1 Nanyang Walk 637616, Singapore
J. D. Long: Plasma Source and Application Center, NIE, Nanyang Technological University, 1 Nanyang Walk 637616, Singapore
Q. J. Cheng: Plasma Source and Application Center, NIE, Nanyang Technological University, 1 Nanyang Walk 637616, Singapore
X. B. Xu: Physics Department, Nanotech. Center, East China Normal University, Shanghai 200062, P. R. China
J. B. Chu: Physics Department, Nanotech. Center, East China Normal University, Shanghai 200062, P. R. China

Surface Review and Letters (SRL), 2007, vol. 14, issue 02, 225-228

Abstract: Uniformly hemispherical separatedCuInSe2(CIS) quantum dots (QDs) were fabricated by low-frequency inductivity coupled plasma (LF-ICP) assisted radio-frequency (RF) magnetron sputtering technique from a ternary compound target onSi(100) and glass substrate withZnOfilm serving as buffer layer. The average lateral size and densities of the QDs could be controlled by appropriate deposition parameters. The distribution scope of diameters was from 40 to 120 nm, density was from 4.5E9 to 2.1E11/cm2. Field-emission scanning electron microscope (FE-SEM) and energy-dispersive X-ray (EDX) spectrometer were adopted to measure the properties of CIS QDs.

Keywords: CIS; quantum dots; ICP-assisted magnetron (search for similar items in EconPapers)
Date: 2007
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DOI: 10.1142/S0218625X07009293

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