MAGNETORESISTANCE EFFECT IN A MAGNETIC–ELECTRIC-BARRIER STRUCTURE

Chun-Shu Li, Yong-Hong Kong, Wei-Hua Tang and Gui-Lian Zhang
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Chun-Shu Li: Department of Electronic Engineering and Physics, Hunan University of Science and Engineering, Yongzhou, Hunan 425100, People's Republic of China
Yong-Hong Kong: Department of Electronic Engineering and Physics, Hunan University of Science and Engineering, Yongzhou, Hunan 425100, People's Republic of China
Wei-Hua Tang: Department of Electronic Engineering and Physics, Hunan University of Science and Engineering, Yongzhou, Hunan 425100, People's Republic of China
Gui-Lian Zhang: Department of Electronic Engineering and Physics, Hunan University of Science and Engineering, Yongzhou, Hunan 425100, People's Republic of China

Surface Review and Letters (SRL), 2007, vol. 14, issue 02, 255-260

Abstract: A Magnetoresistance device is proposed in a both magnetically and electrically modulated two-dimensional electron gas, which can be realized experimentally by the deposition, on the top and bottom of a semiconductor heterostructure, of two parallel metallic ferromagnetic strips under an applied voltage. It is shown that a considerable magnetoresistance effect can be achieved in such a device due to the significant transmission difference for electrons through parallel and antiparallel magnetization configurations. It is also shown that the magnetoresistance ratio depends strongly on the applied voltage to the stripe in the device. These interesting properties may provide an alternative scheme to realize magnetoresistance effect in hybrid ferromagnetic and semiconductor systems, and this system may be used as a voltage-tunable magnetoresistance device.

Date: 2007
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DOI: 10.1142/S0218625X07009335

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