EFFECTS OFLaDOPING ON FERROELECTRIC PROPERTIES OFCaBi4Ti4O15THIN FILMS

Yanxia Ding, Guangda Hu () and Suhua Fan
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Yanxia Ding: School of Materials Science and Engineering, University of Jinan, Jinan 250022, China
Guangda Hu: School of Materials Science and Engineering, University of Jinan, Jinan 250022, China
Suhua Fan: College of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101, China

Surface Review and Letters (SRL), 2007, vol. 14, issue 02, 277-281

Abstract: LamodifiedCBTi(CLBTi) thin films were prepared onPt/Ti/SiO2/Si(100)substrates by a sol–gel technique. X-ray diffraction analysis showed that single phase ofCLBTithin films were obtained. Their crystallization and hysteresis behavior were strongly dependent on the La contents. An increase of2Pras well as a decrease of2Ecwith the increase ofLaconcentration were observed. The leakage properties ofCBTithin films were found to be improved by theLadoping. The results were discussed with respect to the effects ofLa3+substitution at perovskite A-site.

Keywords: Ferroelectric thin film; bismuth layered perovskite; CaBi4Ti4O15; oxygen vacancy (search for similar items in EconPapers)
Date: 2007
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DOI: 10.1142/S0218625X07009360

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