STRUCTURAL AND OPTICAL PROPERTIES OFn-TYPE POROUS SILICON — EFFECT OF HF CONCENTRATION

N. Jeyakumaran (), B. Natarajan (), S. Ramamurthy and V. Vasu ()
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N. Jeyakumaran: Department of Physics, VHNSN College, Virudhunagar – 626001, Tamilnadu, India
B. Natarajan: Department of Physics, SACS MAVMM Engineering College, Madurai – 625301, Tamilnadu, India
S. Ramamurthy: Department of Physics, Gandhigram Rural University, Gandhigram – 624302, Tamilnadu, India
V. Vasu: Department of Physics, Madurai Kamaraj University College, Madurai – 625002, Tamilnadu, India

Surface Review and Letters (SRL), 2007, vol. 14, issue 02, 293-300

Abstract: Porous silicon layers have been prepared from n-type silicon wafers of (100) orientation. SEM, XRD, FTIR, and PL have been used to characterize the morphological and optical properties of porous silicon. The influence of varying HF concentration in the anodizing solution, on structural and optical properties of porous silicon has been investigated. It is observed that pore size increases with HF:ethanol concentration ratio and attain maximum for 1:2 ratio and then decreases.

Keywords: Concentration; hydrogen bonds; porous silicon; porosity; peak intensity; lattice parameter; luminescence (search for similar items in EconPapers)
Date: 2007
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DOI: 10.1142/S0218625X07009384

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