ELECTRONIC STRUCTURE OFAgCd2GaS4

V. V. Atuchin (), V. G. Kesler and O. V. Parasyuk
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V. V. Atuchin: Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 90, 630090, Russia
V. G. Kesler: Technical Centre, Institute of Semiconductor Physics, SB RAS, Novosibirsk 90, 630090, Russia
O. V. Parasyuk: Department of General and Inorganic Chemistry, Volyn State University, Voli Ave 13, Lutsk 43025, Ukraine

Surface Review and Letters (SRL), 2007, vol. 14, issue 03, 403-409

Abstract: The electronic structure ofAgCd2GaS4crystal has been studied with X-ray photoelectron spectroscopy (XPS). Chemical bonding effects have been observed by comparative analysis of binding energies of element core levels and crystal structure ofAgCd2GaS4and several ternary sulfides. It has been shown for Ga-bearing sulfides that the increase of mean chemical bond length between gallium and sulfur ions is directly related to the decrease of chemical shift of cation core level binding energy.

Keywords: Quaternary sulfide; XPS; electronic structure; chemical bonding (search for similar items in EconPapers)
Date: 2007
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DOI: 10.1142/S0218625X07009608

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