ELECTRICAL RESISTIVITY OF VERY THIN METALLIC FILMS WITH ISOTROPIC AND ANISOTROPIC SURFACES

M. Cattani (), M. C. Salvadori, F. S. Teixeira, R. S. Wiederkehr and I. G. Brown
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M. Cattani: Institute of Physics, University of São Paulo, C.P. 66318, CEP 05315-970, São Paulo, Brazil
M. C. Salvadori: Institute of Physics, University of São Paulo, C.P. 66318, CEP 05315-970, São Paulo, Brazil
F. S. Teixeira: Institute of Physics, University of São Paulo, C.P. 66318, CEP 05315-970, São Paulo, Brazil
R. S. Wiederkehr: Institute of Physics, University of São Paulo, C.P. 66318, CEP 05315-970, São Paulo, Brazil
I. G. Brown: Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

Surface Review and Letters (SRL), 2007, vol. 14, issue 03, 345-356

Abstract: A quantum mechanical approach is developed to calculate the surface-induced electrical conductivities of very thin metallic films with isotropic and anisotropic surfaces. Two particular cases are analyzed with this formalism: (1) films with isotropic surfaces and (2) films with anisotropic surfaces which have different morphological properties along two orthogonal directions. It is shown that, depending on the differences between these morphological properties, the surface-induced resistivities can be different along these directions. In order to investigate the validity of these predictions we have fabricatedPtfilms, with thickness in the0.90 ≤ d ≤ 11.10nmrange, with very different morphological properties along two orthogonal directions. Measuring the electrical resistivities of these films, we have found different resistivities along these directions. We show that this anisotropic resistivity can be well explained by our theoretical approach.

Keywords: Anisotropic resistivity of thin films; matallic thin films (search for similar items in EconPapers)
Date: 2007
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DOI: 10.1142/S0218625X07009645

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