THE STUDY ON THE ELECTRIC FIELD EFFECT IN THELa0.8Ca0.2MnO3/PbZr0.2Ti0.8O3/SiHETEROSTRUCTURE

Zhang Wei Wei, Wang Li Feng, Zhou Yu Qing and Zhu Ming
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Zhang Wei Wei: Physics Department, Southeast University, Nanjing 211189, P. R. China
Wang Li Feng: Physics Department, Southeast University, Nanjing 211189, P. R. China
Zhou Yu Qing: Physics Department, Southeast University, Nanjing 211189, P. R. China
Zhu Ming: Physics Department, Southeast University, Nanjing 211189, P. R. China

Surface Review and Letters (SRL), 2007, vol. 14, issue 04, 617-621

Abstract: A detailed quantitative investigation of the current–voltage(I–V)relationship under the low and the high electric field in theLa0.8Ca0.2MnO3/PbZr0.2Ti0.8O3/Siheterostructure over a wide range of temperature was performed. The effective mobility and carrier concentration were then calculated through the electric field effect theory. The differential mobility can be modulated and enhanced significantly by the gate voltage in the vicinity of the metal–insulator-transition temperature. The carrier concentration is proportional to the applied gate voltage. At the room temperature the carrier concentration is found to be2.5 × 10-9under 10 V bias and remains almost unchanged at different temperatures.

Keywords: Heterostructure; electric field effect; mobility; carrier concentration (search for similar items in EconPapers)
Date: 2007
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DOI: 10.1142/S0218625X07009785

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