FABRICATION AND PROPERTIES OFLa0.8Ca0.2MnO3FIELD EFFECT TRANSISTORS

Wang Li Feng, Zhang Wei Wei, Zhou Yu Qing and Zhu Ming
Additional contact information
Wang Li Feng: Department of Physics, Southeast University, Nanjing 211189, P. R. China
Zhang Wei Wei: Department of Physics, Southeast University, Nanjing 211189, P. R. China
Zhou Yu Qing: Department of Physics, Southeast University, Nanjing 211189, P. R. China
Zhu Ming: Department of Physics, Southeast University, Nanjing 211189, P. R. China

Surface Review and Letters (SRL), 2007, vol. 14, issue 04, 745-749

Abstract: The inverted-gate colossal magnetoresistance-field-effect-transistors (CMR-FETs) were designed and successfully fabricated on theSisubstrate by using semiconductor techniques. The studies on the capacitance properties were carried out under different temperatures, different frequencies, and different gate biases. The results indicate thatLa0.8Ca0.2MnO3is the typicalp-type semiconductor. It was shown that the capacitance increases with the increasing of the temperature under certain gate bias. The sudden increase of the capacitance at 160 K was observed and needeed to be studied further. Meanwhile the capacitance decreased as the frequency increased with first order exponential decay fitting.

Keywords: LCMO-pETs; inverted gate type; lithography; capacitance (search for similar items in EconPapers)
Date: 2007
References: View complete reference list from CitEc
Citations:

Downloads: (external link)
http://www.worldscientific.com/doi/abs/10.1142/S0218625X07010184
Access to full text is restricted to subscribers

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:wsi:srlxxx:v:14:y:2007:i:04:n:s0218625x07010184

Ordering information: This journal article can be ordered from

DOI: 10.1142/S0218625X07010184

Access Statistics for this article

Surface Review and Letters (SRL) is currently edited by S Y Tong

More articles in Surface Review and Letters (SRL) from World Scientific Publishing Co. Pte. Ltd.
Bibliographic data for series maintained by Tai Tone Lim ().