STUDIES ON THE HETEROJUNCTION STRUCTURE OFn-Si/p-NANOCRYSTALLINE DIAMOND FILM

Linjun Wang (), Jianmin Liu, Ling Ren, Qingfeng Su, Run Xu, Weimin Shi and Yiben Xia
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Linjun Wang: School of Materials Science and Engineering, Shanghai University, Shanghai 200072, P. R. China
Jianmin Liu: School of Materials Science and Engineering, Shanghai University, Shanghai 200072, P. R. China
Ling Ren: School of Materials Science and Engineering, Shanghai University, Shanghai 200072, P. R. China
Qingfeng Su: School of Materials Science and Engineering, Shanghai University, Shanghai 200072, P. R. China
Run Xu: School of Materials Science and Engineering, Shanghai University, Shanghai 200072, P. R. China
Weimin Shi: School of Materials Science and Engineering, Shanghai University, Shanghai 200072, P. R. China
Yiben Xia: School of Materials Science and Engineering, Shanghai University, Shanghai 200072, P. R. China

Surface Review and Letters (SRL), 2007, vol. 14, issue 04, 761-764

Abstract: An undoped p-type nanocrystalline diamond (NCD) film was grown by an electron assisted hot filament chemical vapor deposition (EA-HFCVD) technology on an n-type single-crystallineSisubstrate to fabricate p-NCD/n-Siheterojunction. The structure and morphology of the NCD film, which was analyzed by Raman spectroscopy, X-ray diffraction (XRD), and scanning electron microscopy (SEM), showed that the film consisted of 40–60 nm polycrystalline nano-grains. The results showed that with EA-HFCVD method, not only an undoped NCD film with high conductivity but also a p–n heterojunction diode between the NCD film and n-Sisubstrate was fabricated successfully. The p-NCD/n-Siheterostructure was also used for ultraviolet (UV) photodetector application. Operating at a bias voltage of 10 V, this photodetector showed a significant discrimination between UV and visible light, and the UV/visible-blind ratio was about three orders of magnitude.

Keywords: Nanocrystalline diamond film; electrical properties; chemical vapor deposition (search for similar items in EconPapers)
Date: 2007
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DOI: 10.1142/S0218625X07010214

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