DENSITY OF SURFACE STATES INPd/SiGe/SiINTERFACE FROM CAPACITANCE MEASUREMENTS

A. Sellai, M. Mamor and S. Al-Harthi
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A. Sellai: Sultan Qaboos University, Department of Physics, P.O Box 36, Muscat 123, Oman
M. Mamor: Sultan Qaboos University, Department of Physics, P.O Box 36, Muscat 123, Oman
S. Al-Harthi: Sultan Qaboos University, Department of Physics, P.O Box 36, Muscat 123, Oman

Surface Review and Letters (SRL), 2007, vol. 14, issue 04, 765-768

Abstract: Pd/Si0.9Ge0.1/SiSchottky barrier diodes subjected to irradiation are characterized using capacitance and conductance measurements performed under forward and reverse bias while varying the temperature and frequency. TheC–Vtechnique has been used in particular to determine the carriers profile as well as the interface state density and its energy distribution.

Keywords: Schottky barrier; interface states; capacitance spectroscopy (search for similar items in EconPapers)
Date: 2007
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DOI: 10.1142/S0218625X07010226

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