A BILAYER BUFFER USING 214TEu2CuO4AND CUBIC YSZ FOR GROWINGYBa2Cu3OyTHIN FILMS ONSi

J. Gao (), E. G. Fu and X. S. Wu
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J. Gao: Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China
E. G. Fu: Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China
X. S. Wu: Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China

Surface Review and Letters (SRL), 2007, vol. 14, issue 04, 773-777

Abstract: Highly epitaxial thin films ofYBa2Cu3Oy(YBCO) have been successfully grown onSiusing a double buffer ofEu2CuO4(ECO)/(yttrium-stabilized zirconia) YSZ. The severe reaction betweenSiand YBCO is blocked by YSZ, and the crystallinity and superconductivity of the grown YBCO due to the lattice mismatch between YBCO and YSZ are improved by the ECO layer. The grown films were characterized by high-resolution X-ray diffraction, grazing incidence X-ray reflection, scanning electron microscopy (SEM), and Doppler broadened annihilation radiation spectroscopy, respectively. Very clear interfaces were found at YBCO/ECO/YSZ boundaries without any intermediate layer. The YBCO film surface was more smooth and stable. The results obtained indicate that highly epitaxial YBCO thin films can be successfully grown onSiwafers, demonstrating advantages of such a double buffer structure.

Date: 2007
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DOI: 10.1142/S0218625X0701024X

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