DISLOCATION DENSITY INSrTiO3FILM GROWN ONDyScO3BY PULSE LASER ABLATION
Z. Y. Zhai,
X. Z. Li,
S. S. Zhi,
X. S. Wu (),
J. H. Hao and
J. Gao
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Z. Y. Zhai: Lab of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China
X. Z. Li: Lab of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China
S. S. Zhi: Lab of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China
X. S. Wu: Lab of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China
J. H. Hao: Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China
J. Gao: Department of Physics, The University of Hong Kong, Pokflam Road, Hong Kong, China
Surface Review and Letters (SRL), 2007, vol. 14, issue 04, 779-782
Abstract:
SrTiO3films are fabricated onDyScO3substrates by pulse laser deposition.In situX-ray diffraction (XRD) is used to characterize the thermal expansion coefficient at low temperature. The abnormal behavior in lattice parameter at 80 K may be the hint of a phase transition. High resolution XRD is performed to detect the two kinds of dislocations, i.e. screw and edge. Results show that the density of edge dislocation is a little larger than that of the screw one. The total dislocation density has the order of about 108cm-2. Edge dislocation density decreases with the increase of the film thickness. We argue that the ratio between these two dislocation densities results in the growth mode of the film.
Date: 2007
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DOI: 10.1142/S0218625X07010251
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