ELECTRONIC PARAMETER AND SUBBAND STRUCTURE VARIATIONS DUE TO AN EMBEDDEDAlNPOTENTIAL BARRIER LAYER INAl0.3Ga0.7N/GaNHETEROSTRUCTURES

S. M. Han, S. Y. Kim, D. C. Choo, J. I. Jung, T. W. Kim (), K. H. Yoo, Y. H. Jo, M. H. Jung, H. I. Cho, J. H. Lee and L. R. Ram-Mohan
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S. M. Han: Information Display Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
S. Y. Kim: Information Display Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
D. C. Choo: Research Institute of Information Display, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
J. I. Jung: Research Institute of Information Display, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
T. W. Kim: Research Institute of Information Display, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
K. H. Yoo: Department of Physics and Research Institute for Basic Sciences, Kyung Hee University, Seoul 130-701, Korea
Y. H. Jo: Quantum Material Research Team, Korea Basic Science Institute, Daejon 305-333, Korea
M. H. Jung: Quantum Material Research Team, Korea Basic Science Institute, Daejon 305-333, Korea
H. I. Cho: Department of Electric and Electronic Engineering, Kyungpook National University, 1370 Sangyeok-dong, Buk-ku, Daegu 702-701, Korea
J. H. Lee: Department of Electric and Electronic Engineering, Kyungpook National University, 1370 Sangyeok-dong, Buk-ku, Daegu 702-701, Korea
L. R. Ram-Mohan: Department of Physics, Worcester Polytechnic Institute, Worcester, Massachusetts 01609, USA

Surface Review and Letters (SRL), 2007, vol. 14, issue 04, 807-811

Abstract: Carrier density of a two-dimensional electron gas (2DEG) inAl0.3Ga0.7N/GaNandAl0.3Ga0.7N/AlN/GaNheterostructures was investigated by performing Shubnikov-de Haas (SdH) measurements. The angular-dependent SdH measurements and the fast Fourier transformation results for the SdH data indicated 2DEG occupation of one subband in the triangular potential wells. The carrier densities of the 2DEGs in theAl0.3Ga0.7N/AlN/GaNand theAl0.3Ga0.7N/GaNheterostructures at 1.5 K, determined from the SdH data, were 1.28 × 1013and 1.12 × 1013cm-2, respectively. The electron carrier density of the 2DEG in theAl0.3Ga0.7N/GaNheterostructure with anAlNembedded potential barrier layer was larger than that in theAl0.3Ga0.7N/GaNheterostructure. The electronic subband energies, the wave functions, and the Fermi energies in theAl0.3Ga0.7N/AlN/GaNandAl0.3Ga0.7N/GaNheterostructures were calculated by using a self-consistent method taking into account spontaneous and piezoelectric polarizations.

Keywords: Al0.3Ga0.7N/GaN; Al0.3Ga0.7N/AlN/GaN; electronic parameter; electronic structure (search for similar items in EconPapers)
Date: 2007
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DOI: 10.1142/S0218625X07010305

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