MODEL OF THE POTENTIAL BARRIER OUTSIDE THE SURFACE OF A CONDUCTOR WITH WALLS OF FINITE THICKNESS

L. X. Li (), R. P. Liu, D. T. Zhang, B. H. Li, Y. L. Cui, P. F. Zhang and H. W. Song
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L. X. Li: Department of Physics & Chemistry, Henan Polytechnic University, Jiaozuo, 454000, P. R. China
R. P. Liu: State Key Laboratory of Metastable Materials Science & Technology, Yanshan University, Qinhuangdao 066004, P. R. China
D. T. Zhang: Department of Physics & Chemistry, Henan Polytechnic University, Jiaozuo, 454000, P. R. China
B. H. Li: Department of Physics & Chemistry, Henan Polytechnic University, Jiaozuo, 454000, P. R. China
Y. L. Cui: Department of Physics & Chemistry, Henan Polytechnic University, Jiaozuo, 454000, P. R. China
P. F. Zhang: Department of Physics & Chemistry, Henan Polytechnic University, Jiaozuo, 454000, P. R. China
H. W. Song: Key Laboratory of Excited State Physics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun 130033, P. R. China

Surface Review and Letters (SRL), 2007, vol. 14, issue 05, 963-967

Abstract: Tunneling effect of graphite is studied by atomic force microscopy. The tunneling current in the gap between a conductive tip and a newly cleaved graphite surface at a given voltage keeps almost constant when the gap-distance varies within 1 μm, which cannot be explained by the commonly accepted well model of the potential outside a conductor. Thus modification of the well model is made and a cup model, with a certain wall thickness of the cup, is proposed in the present work.

Keywords: Surface potential; atomic force microscopy; tunneling; potential well model; graphite (search for similar items in EconPapers)
Date: 2007
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DOI: 10.1142/S0218625X0701038X

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